Adding HCl during Chemical Vapor Deposition Produces Controlled Growth of 6H-SiC on On-Axis 6H-SiC(0001) Substrates
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چکیده
منابع مشابه
MOCVD Growth of GaBN on 6H-SiC (0001) Substrates
BxGa1–xN films were deposited on 6H-SiC (0001) substrates at 1000°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. The presence of boron was detected by Auger scanning microprobe, the shift of the (00.2) x-ray diffraction peak, and low-temperature photoluminescence. A single-phase BxGa1–xN alloy with x = 1.5% was produced at the gas phase B/Ga ratio of 0.005....
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Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C an...
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1 Georgia Institute of Technology/GTL UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France 2 Laboratoire Matériaux Optiques, Photonique et micro-nano Systèmes – UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin, 57070 Metz, France 3 Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, USA 4 Laboratoire de Photonique et de Nanostructures...
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We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...
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In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorde...
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ژورنال
عنوان ژورنال: MRS Bulletin
سال: 2000
ISSN: 0883-7694,1938-1425
DOI: 10.1557/mrs2000.141